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Title: Nucleation and growth dynamics of MBE-grown topological insulator Bi{sub 2}Te{sub 3} films on Si (111)

Topological insulator Bi{sub 2}Te{sub 3} films have been grown by molecular beam epitaxy on Si (111) substrates. The structural properties of the ultra-thin films and their evolution in morphology during the growth have been investigated. The growth starts by a nucleation of separate islands and subsequently turns into a layer-by-layer growth mode. Despite this, the grown film is found to be single crystalline and fully relaxed from the first atomic layer.
Authors:
; ; ;  [1] ;  [2]
  1. Peter Grünberg Institut - 9, Forschungszentrum Jülich, 52425 Jülich, Germany and JARA - Fundamentals of Future Information Technologies (Germany)
  2. Peter Grünberg Institut - 5 and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, 52425 Jülich (Germany)
Publication Date:
OSTI Identifier:
22261778
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH TELLURIDES; LAYERS; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; SUBSTRATES; THIN FILMS