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Title: LA phonons scattering of surface electrons in Bi{sub 2}Se{sub 3}

Within the Boltzmann equation formalism we evaluate the transport relaxation time of Dirac surface states (SSs) in the typical topological insulator(TI) Bi{sub 2}Se{sub 3} due to the phonon scattering. We find that although the back-scattering of the SSs in TIs is strictly forbidden, the in-plane scattering between SSs in 3-dimensional TIs is allowed, maximum around the right-angle scattering. Thus the topological property of the SSs only reduces the scattering rate to its one half approximately. Besides, the larger LA deformation potential and lower sound velocity of Bi{sub 2}Se{sub 3} enhance the scattering rate significantly. Compared with the Dirac electrons in graphene, we find the scattering rate of SSs in Bi{sub 2}Se{sub 3} are two orders of magnitudes larger, which agree with the recent transport experiments.
Authors:
 [1] ;  [2]
  1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084 (China)
  2. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China and Institute of Advanced Study, Tsinghua University, Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22261777
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BACKSCATTERING; BISMUTH SELENIDES; BOLTZMANN EQUATION; ELECTRONS; GRAPHENE; PHONONS; RELAXATION TIME