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Title: Understanding polarization properties of InAs quantum dots by atomistic modeling of growth dynamics

A model for realistic InAs quantum dot composition profile is proposed and analyzed, consisting of a double region scheme with an In-rich internal core and an In-poor external shell, in order to mimic the atomic scale phenomena such as In-Ga intermixing and In segregation during the growth and overgrowth with GaAs. The parameters of the proposed model are derived by reproducing the experimentally measured polarization data. Further understanding is developed by analyzing the strain fields which suggests that the two-composition model indeed results in lower strain energies than the commonly applied uniform composition model.
Authors:
; ; ;  [1] ;  [2]
  1. National Nanotechnology Laboratory, Istituto Nanoscienze CNR, Via Arnesano, 73100 Lecce (Italy)
  2. Tyndall National Institute, Lee Maltings, Dyke Parade, Cork (Ireland)
Publication Date:
OSTI Identifier:
22261769
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; GALLIUM ARSENIDES; INDIUM ARSENIDES; POLARIZATION; QUANTUM DOTS; SIMULATION; STRAINS