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Title: Microwave studies of weak localization and antilocalization in epitaxial graphene

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4848334· OSTI ID:22261768
;  [1];  [2];  [3];  [4]
  1. Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland)
  2. Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw, Poland and Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland)
  3. Institute of Electronic Materials Technology, ul. Wólczyñska 133, 01-919 Warsaw (Poland)
  4. Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw, Poland and Institute of Electronic Materials Technology, ul. Wólczyñska 133, 01-919 Warsaw (Poland)

A microwave detection method was applied to study weak localization and antilocalization in epitaxial graphene sheets grown on both polarities of SiC substrates. Both coherence and scattering length values were obtained. The scattering lengths were found to be smaller for graphene grown on C-face of SiC. The decoherence rate was found to depend linearly on temperature, showing the electron-electron scattering mechanism.

OSTI ID:
22261768
Journal Information:
AIP Conference Proceedings, Vol. 1566, Issue 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English