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Title: Difference of operation mechanisms in SWNTs network FETs studied via scanning gate microscopy

Field effect transistors (FETs) whose channel is composed of a network of single wall carbon nanotubes (SWNTs) have been studied to investigate the mechanism of the device operation via scanning gate microscopy (SGM) at room temperature. We observed different SGM response in networks of SWNTs either synthesized by CoMoCAT process or semiconducting enriched by density gradient ultracentrifuge process. In the former case, SGM response was observed at specific inter-tube junctions suggesting a Schottky junction formed with semiconducting and metallic SWNTs in the network. In contrast, multiple concentric rings in the SGM response are observed within the tubes in a network of the latter SWNTs suggesting a possibility of quantum mechanical transport at room-temperature. Different type of SGM responses are confirmed in the two kinds of SWNTs networks, nevertheless such active positions would likely have an important role in the FET operation mechanism in each network.
Authors:
; ; ; ; ;  [1] ;  [2] ;  [3]
  1. Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522 (Japan)
  2. Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY 14260-1920 (United States)
  3. Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198 (Japan)
Publication Date:
OSTI Identifier:
22261757
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARBON NANOTUBES; DENSITY; FIELD EFFECT TRANSISTORS; MICROSCOPY; ULTRACENTRIFUGES