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Title: High resolution InSb quantum well ballistic nanosensors for room temperature applications

We report the room temperature operation of a quasi-ballistic InSb quantum well Hall sensor that exhibits a high frequency sensitivity of 560nT/√Hz at 20uA bias current. The device utilizes a partitioned buffer layer design that suppresses leakage currents through the mesa floor and can sustain large current densities.
Authors:
;  [1] ;  [2] ;  [3]
  1. Blackett Laboratory, Imperial College London, SW7 2BZ (United Kingdom)
  2. Department of Physics, Lancaster University, Lancaster, LA1 4YB (United Kingdom)
  3. Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130 (United States)
Publication Date:
OSTI Identifier:
22261751
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CURRENT DENSITY; INDIUM ANTIMONIDES; LEAKAGE CURRENT; QUANTUM WELLS; TEMPERATURE RANGE 0273-0400 K