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Title: Fundamental optical properties of InN grown by epitaxial lateral overgrowth method

Optical properties of InN grown by the epitaxial lateral overgrowth (ELO) method have been studied using photoluminescence (PL) and excitation-correlation (EC) measurements. The PL spectrum is analyzed by free-electron recombination band (FERB) model, which shows that the ELO sample has a very low background carrier concentration (n=5.5*10{sup 16}[cm{sup −3]}). EC measurements show that the dependences of the band gap renormalization and Auger effect on the carrier concentrations are similar in spite of the different physical origins.
Authors:
; ; ; ; ; ;  [1]
  1. Department of Engineering and Applied Science, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554 (Japan)
Publication Date:
OSTI Identifier:
22261750
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; AUGER EFFECT; EPITAXY; INDIUM NITRIDES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RENORMALIZATION; SPECTRA