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Title: Nexus between coherent longitudinal-optical phonons and electronic diffusions in low-gap semiconductors

We have studied the characteristics of longitudinal-optical-phonon--plasmon coupled (LOPC) mode as a function of thickness in InAs epilayers, ranging from 10 to 900 nm. The absence of LOPC modes in a scale less than exciton Bohr radius manifests the role of electron diffusion rather than the carrier screening via drift motion in surface depletion region.
Authors:
;  [1] ;  [2] ;  [3] ;  [4]
  1. School of Info. and Comm., Gwangju Institute of Science and Technology, Gwangju 500-712 (Korea, Republic of)
  2. Department of Physics, Chungnam National University, Daejeon 305-764 (Korea, Republic of)
  3. Department of Physics, University of Florida, Gainesville, Florida 32611-8440 (United States)
  4. Nano-Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22261749
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DIFFUSION; INDIUM ARSENIDES; PHONONS; SEMICONDUCTOR MATERIALS