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Title: Carriers mobility of InAs- and InP- rich InAs-InP solid solutions irradiated by fast neutrons

We have studied the low temperature charge carriers mobility in bulk single crystals of InAs- and InP- rich InAs-InP solid solutions irradiated with maximum integral flux 2⋅10{sup 18} n/cm{sup 2} of fast neutrons. Influence of minor component small addition in InAs-InP solid solutions has been revealed. There are also presented data of radiation defects thermal stability.
Authors:
; ;  [1] ; ; ;  [2] ;  [3] ;  [1] ;  [4]
  1. Ferdinand Tavadze Institute of Metallurgy and Materials Science,15 Kazbegi str, 0160 Tbilisi (Georgia)
  2. Iv.Javakhishvili Tbilisi State University, 1 Chavchavadze Ave., 0179 Tbilisi (Georgia)
  3. Institute of Physics of National Academy of Sciences, 33 H. Cavid Avenue, 1143 Baku (Azerbaijan)
  4. (Georgia)
Publication Date:
OSTI Identifier:
22261748
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1566; Journal Issue: 1; Conference: ICPS 2012: 31. international conference on the physics of semiconductors, Zurich (Switzerland), 29 Jul - 3 Aug 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CHARGE CARRIERS; DEFECTS; FAST NEUTRONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; IRRADIATION; MONOCRYSTALS; SOLID SOLUTIONS