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Title: Gate-controlled electron spins in quantum dots

In this paper we study the properties of anisotropic semiconductor quantum dots (QDs) formed in the conduction band in the presence of the magnetic field. The Kane-type model is formulated and is analyzed by using both analytical and finite element techniques. Among other things, we demonstrate that in such quantum dots, the electron spin states in the phonon-induced spin-flip rate can be manipulated with the application of externally applied anisotropic gate potentials. More precisely, such potentials enhance the spin flip rates and reduce the level crossing points to lower quantum dot radii. This happens due to the suppression of the g-factor towards bulk crystal. We conclude that the phonon induced spin-flip rate can be controlled through the application of spin-orbit coupling. Numerical examples are shown to demonstrate these findings.
Authors:
 [1] ;  [2] ;  [3]
  1. M2NeT Laboratory, Wilfrid Laurier University, Waterloo, ON, N2L3C5 (Canada)
  2. M2NeT Laboratory, Wilfrid Laurier University, Waterloo, ON, N2L3C5 and Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911, Leganes (Spain)
  3. Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911, Leganes, Spain and School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138 (United States)
Publication Date:
OSTI Identifier:
22261718
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1569; Journal Issue: 1; Conference: 3. international advances in applied physics and materials science congress, Antalya (Turkey), 24-28 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; ANISOTROPY; CRYSTALS; ELECTRONS; FINITE ELEMENT METHOD; L-S COUPLING; MAGNETIC FIELDS; PHONONS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPIN; SPIN FLIP