skip to main content

SciTech ConnectSciTech Connect

Title: Properties of boron-doped thin films of polycrystalline silicon

The properties of polycrystalline-silicon films deposited by low pressure chemical vapor deposition and doped heavily in situ boron-doped with concentration level of around 2×10{sup 20}cm{sup −3} has been studied. Their properties are analyzed using electrical and structural characterization means by four points probe resistivity measurements and X-ray diffraction spectra. The thermal-oxidation process are performed on sub-micron layers of 200nm/c-Si and 200nm/SiO{sub 2} deposited at temperatures T{sub d} ranged between 520°C and 605°C and thermally-oxidized in dry oxygen ambient at 945°C. Compared to the as-grown resistivity with silicon wafers is known to be in the following sequence <ρ{sub 200nm/c−Si}> < <ρ{sub 200nm/SiO2}> and <ρ{sub 520}> < <ρ{sub 605}>. The measure X-ray spectra is shown, that the Bragg peaks are marked according to the crystal orientation in the film deposited on bare substrates (poly/c-Si), for the second series of films deposited on bare oxidized substrates (poly/SiO{sub 2}) are clearly different.
Authors:
 [1]
  1. Electronic Department, Faculty of Science and Technology, University of Jijel, Cité Ouled-Aissa B. P. 98 Jijel, 18 000 Jijel (Algeria)
Publication Date:
OSTI Identifier:
22261707
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1569; Journal Issue: 1; Conference: 3. international advances in applied physics and materials science congress, Antalya (Turkey), 24-28 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BORON; BRAGG CURVE; DEPOSITS; DOPED MATERIALS; OXIDATION; POLYCRYSTALS; SILICA; SILICON; SILICON OXIDES; SUBSTRATES; THIN FILMS; X-RAY DIFFRACTION; X-RAY SPECTRA