Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique
- Department of Metallurgical and Materials Engineering, Istanbul Technical University, Ayazağa 34469, Istanbul (Turkey)
- Faculty of Arts and Sciences, Department of Physics, Namık Kemal University, Değirmenaltı, Tekirdağ (Turkey)
Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ{sub B}, diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.
- OSTI ID:
- 22261687
- Journal Information:
- AIP Conference Proceedings, Vol. 1569, Issue 1; Conference: 3. international advances in applied physics and materials science congress, Antalya (Turkey), 24-28 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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