skip to main content

SciTech ConnectSciTech Connect

Title: Investigation of structural and electrical properties of flat a-Si/c-Si heterostructure fabricated by EBPVD technique

Flat amorphous silicon - crystal silicon (a-Si/c-Si) heterostructure were prepared by ultra-high vacuum electron beam evaporation technique on p-Si (111) and n-Si (100) single crystal substrates. Structural analyses were investigated by XRD, Raman and FEG-SEM analysis. With these analyses we determined that at the least amorphous structure shows modification but amorphous structure just protected. The electrical and photovoltaic properties of flat a-Si/c-Si heterojunction devices were investigated with current-voltage characteristics under dark and illumination conditions. Electrical properties of flat a-Si/c-Si heterorojunction; such as barrier height Φ{sub B}, diode ideality factor η were determined from current-voltage characteristics in dark conditions. These a-Si/c-Si heterostructure have good rectification behavior as a diode and exhibit high photovoltaic sensitivity.
Authors:
 [1] ;  [2] ; ;  [1]
  1. Department of Metallurgical and Materials Engineering, Istanbul Technical University, Ayazağa 34469, Istanbul (Turkey)
  2. Faculty of Arts and Sciences, Department of Physics, Namık Kemal University, Değirmenaltı, Tekirdağ (Turkey)
Publication Date:
OSTI Identifier:
22261687
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1569; Journal Issue: 1; Conference: 3. international advances in applied physics and materials science congress, Antalya (Turkey), 24-28 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; ELECTRICAL PROPERTIES; ELECTRON BEAMS; MONOCRYSTALS; PHOTOVOLTAIC EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; X-RAY DIFFRACTION