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Title: Effect of the mobility on (I-V) characteristics of the MOSFET

MOSFET Transistor was the subject of many studies and research works (electronics, data-processing, telecommunications...) in order to exploit its interesting and promising characteristics. The aim of this contribution is devoted to the effect of the mobility on the static characteristics I-V of the MOSFET. The study enables us to calculate the drain current as function of bias in both linear and saturated modes; this effect is evaluated using a numerical simulation program. The influence of mobility was studied. Obtained results allow us to determine the mobility law in the MOSFET which gives optimal (I-V) characteristics of the component.
Authors:
 [1] ;  [2]
  1. Technology Department, Faculty of Technology, 20 August 1955 University, BP 26, El-Hadaiek Street 21000 Skikda, Algeria and Department of Physics, Faculty of Science, Thin Films and Interfaces Laboratory, P. B 325, Ain El Bey Street, Mentouri Univers (Algeria)
  2. Department of Material Sciences, Larbi Ben M'hidi University, BP 358, Constantine Street, 04000 Oum El-Bouaghi, Algeria and Department of Physics, Faculty of Science, Thin Films and Interfaces Laboratory, P. B 325, Ain El Bey Street, Mentouri Univers (Algeria)
Publication Date:
OSTI Identifier:
22261679
Resource Type:
Journal Article
Resource Relation:
Journal Name: AIP Conference Proceedings; Journal Volume: 1569; Journal Issue: 1; Conference: 3. international advances in applied physics and materials science congress, Antalya (Turkey), 24-28 Apr 2013; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 97 MATHEMATICAL METHODS AND COMPUTING; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; MOBILITY; MOSFET