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Title: Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

This Letter investigates abnormal channel width-dependent threshold voltage variation in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors. Unlike drain-induced source barrier lowering effect, threshold voltage increases with increasing drain voltage. Furthermore, the wider the channel, the larger the threshold voltage observed. Because of the surrounding oxide and other thermal insulating material and the low thermal conductivity of the IGZO layer, the self-heating effect will be pronounced in wider channel devices and those with a larger operating drain bias. To further clarify the physical mechanism, fast IV measurement is utilized to demonstrate the self-heating induced anomalous channel width-dependent threshold voltage variation.
Authors:
;  [1] ;  [2] ;  [3] ; ; ;  [4] ; ;  [5] ;  [2] ;  [6]
  1. Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China)
  2. Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  3. (China)
  4. Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China)
  5. Department of Photonics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China)
  6. Advanced Display Technology Research Center, AU Optronics, No. 1, Li-Hsin Rd. 2, Hsinchu Science Park, Hsinchu 30078, Taiwan (China)
Publication Date:
OSTI Identifier:
22261644
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRIC POTENTIAL; GALLIUM; INDIUM; THERMAL CONDUCTIVITY; THIN FILMS; TRANSISTORS; ZINC OXIDES