skip to main content

SciTech ConnectSciTech Connect

Title: Electronic states, pseudo-spin, and transport in the zinc-blende quantum wells and wires with vanishing band gap

We consider theoretically the electronic structure of quasi-two and quasi-one-dimensional heterostructures comprised of III–V and II–VI semiconductors such as InAs/GaInSb and HgCdTe. We show that not only a Dirac-like dispersion exists in these materials when the energy gap approaches zero but also the states with opposite momentum are orthogonal (i.e., can be described by a pseudo-spin), which suppresses backscattering and thereby enhances the electron mobility, by analogy with the case of graphene. However, unlike in graphene, a quasi-one-dimensional quantum wire with zero gap can be realized, which should eliminate most of the scattering processes and lead to long coherence lengths required for both conventional and ballistic electronic devices.
Authors:
 [1] ;  [2]
  1. Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States)
  2. Code 5613, Naval Research Laboratory, Washington, DC 20375 (United States)
Publication Date:
OSTI Identifier:
22261630
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; BACKSCATTERING; COHERENCE LENGTH; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; ENERGY GAP; GRAPHENE; INDIUM ARSENIDES; QUANTUM WELLS; QUANTUM WIRES; SEMICONDUCTOR MATERIALS; ZINC SULFIDES