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Title: Transient and persistent current induced conductivity changes in GaAs/AlGaAs high-electron-mobility transistors

We report the observation of a current induced change of the low temperature conductivity of two-dimensional electron gases in GaAs/AlGaAs-high-electron-mobility transistors. By applying voltage pulses on the ohmic contacts of a Hall bar-mesa-structure, both sheet-carrier-density n{sub 2D} and electron mobility μ are decreased. At temperatures below 50 K, a persistent change combined with a partial transient recovery of n{sub 2D} has been observed. The transient behaviour and the lateral spreading of the effect are studied. Moreover, a temperature dependent investigation has been done in order to get insight into the addressed defect energy levels. A model based on the phenomenology of the effect is proposed. The observed effect is not a permanent degradation as the original carrier concentration can be restored by warming up the sample to room temperature and recooling it.
Authors:
; ; ;  [1]
  1. Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstraße 150, 44780 Bochum (Germany)
Publication Date:
OSTI Identifier:
22261628
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; CARRIER DENSITY; ELECTRON MOBILITY; GALLIUM ARSENIDES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TRANSIENTS; TRANSISTORS