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Title: Control of work function of graphene by plasma assisted nitrogen doping

Abstract

Nitrogen doping is expected to provide several intriguing properties to graphene. Nitrogen plasma treatment to defect-free and defective highly oriented pyrolytic graphite (HOPG) samples causes doping of nitrogen atom into the graphene layer. Nitrogen atoms are initially doped at a graphitic site (inside the graphene) for the defect-free HOPG, while doping to a pyridinic or a pyrrolic site (edge of the graphene) is dominant for the defective HOPG. The work function of graphene correlates strongly with the site and amount of doped nitrogen. Nitrogen atoms doped at a graphitic site lower the work function, while nitrogen atoms at a pyridinic or a pyrrolic site increase the work function. Control of plasma treatment time and the amount of initial defect could change the work function of graphite from 4.3 eV to 5.4 eV, which would open a way to tailor the nature of graphene for various industrial applications.

Authors:
; ; ; ;  [1]
  1. Department of Complexity Science and Engineering, The University of Tokyo, Kashiwanoha 5-1-5, Kashiwa, Chiba 277-8561 (Japan)
Publication Date:
OSTI Identifier:
22261624
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; 77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DOPED MATERIALS; GRAPHENE; GRAPHITE; NITROGEN; WORK FUNCTIONS

Citation Formats

Akada, Keishi, Terasawa, Tomo-o, Imamura, Gaku, Obata, Seiji, and Saiki, Koichiro. Control of work function of graphene by plasma assisted nitrogen doping. United States: N. p., 2014. Web. doi:10.1063/1.4870424.
Akada, Keishi, Terasawa, Tomo-o, Imamura, Gaku, Obata, Seiji, & Saiki, Koichiro. Control of work function of graphene by plasma assisted nitrogen doping. United States. https://doi.org/10.1063/1.4870424
Akada, Keishi, Terasawa, Tomo-o, Imamura, Gaku, Obata, Seiji, and Saiki, Koichiro. 2014. "Control of work function of graphene by plasma assisted nitrogen doping". United States. https://doi.org/10.1063/1.4870424.
@article{osti_22261624,
title = {Control of work function of graphene by plasma assisted nitrogen doping},
author = {Akada, Keishi and Terasawa, Tomo-o and Imamura, Gaku and Obata, Seiji and Saiki, Koichiro},
abstractNote = {Nitrogen doping is expected to provide several intriguing properties to graphene. Nitrogen plasma treatment to defect-free and defective highly oriented pyrolytic graphite (HOPG) samples causes doping of nitrogen atom into the graphene layer. Nitrogen atoms are initially doped at a graphitic site (inside the graphene) for the defect-free HOPG, while doping to a pyridinic or a pyrrolic site (edge of the graphene) is dominant for the defective HOPG. The work function of graphene correlates strongly with the site and amount of doped nitrogen. Nitrogen atoms doped at a graphitic site lower the work function, while nitrogen atoms at a pyridinic or a pyrrolic site increase the work function. Control of plasma treatment time and the amount of initial defect could change the work function of graphite from 4.3 eV to 5.4 eV, which would open a way to tailor the nature of graphene for various industrial applications.},
doi = {10.1063/1.4870424},
url = {https://www.osti.gov/biblio/22261624}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 104,
place = {United States},
year = {Mon Mar 31 00:00:00 EDT 2014},
month = {Mon Mar 31 00:00:00 EDT 2014}
}