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Title: Ultrathin, epitaxial cerium dioxide on silicon

It is shown that ultrathin, highly ordered, continuous films of cerium dioxide may be prepared on silicon following substrate prepassivation using an atomic layer of chlorine. The as-deposited, few-nanometer-thin Ce{sub 2}O{sub 3} film may very effectively be converted at room temperature to almost fully oxidized CeO{sub 2} by simple exposure to air, as demonstrated by hard X-ray photoemission spectroscopy and X-ray diffraction. This post-oxidation process essentially results in a negligible loss in film crystallinity and interface abruptness.
Authors:
; ; ; ;  [1] ;  [2] ;  [3]
  1. Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen (Germany)
  2. Photon Science, Deutsches Elektronensynchrotron (DESY), Notkestraße 85, 22607 Hamburg (Germany)
  3. Department of Physics, University of Osnabrück, Barbarastraße 7, 49069 Osnabrück (Germany)
Publication Date:
OSTI Identifier:
22261616
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CERIUM OXIDES; CHLORINE; EPITAXY; FILMS; HARD X RADIATION; PHOTOEMISSION; SILICON; TEMPERATURE RANGE 0273-0400 K; X-RAY DIFFRACTION