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Title: Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors

We demonstrate current-voltage spectroscopy of dopant-induced quantum dots in heavily n-doped junctionless nanowire transistors (JNTs) at low temperatures. The similar multiple-split current peak features for both single-channel and multiple-channel JNTs are found at the initial stage of conduction below the temperature of 75 K. The temperature stability of the pinch-off voltage, affected by activated electrons from defects and donor ionization, has been effectively improved by the 20 nm-width nanowires. The transition temperature for single electron tunneling to thermal activated transport is dependent on the ionization energy of dopants.
Authors:
; ; ; ; ;  [1]
  1. Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Publication Date:
OSTI Identifier:
22261612
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; DOPED MATERIALS; ELECTRONS; QUANTUM DOTS; QUANTUM WIRES; SPECTROSCOPY; TEMPERATURE RANGE 0065-0273 K; TRANSISTORS; TRANSITION TEMPERATURE; TUNNEL EFFECT