Current-voltage spectroscopy of dopant-induced quantum-dots in heavily n-doped junctionless nanowire transistors
- Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
We demonstrate current-voltage spectroscopy of dopant-induced quantum dots in heavily n-doped junctionless nanowire transistors (JNTs) at low temperatures. The similar multiple-split current peak features for both single-channel and multiple-channel JNTs are found at the initial stage of conduction below the temperature of 75 K. The temperature stability of the pinch-off voltage, affected by activated electrons from defects and donor ionization, has been effectively improved by the 20 nm-width nanowires. The transition temperature for single electron tunneling to thermal activated transport is dependent on the ionization energy of dopants.
- OSTI ID:
- 22261612
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electron transport behaviors through donor-induced quantum dot array in heavily n-doped junctionless nanowire transistors
Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor
Back bias induced dynamic and steep subthreshold swing in junctionless transistors
Journal Article
·
Wed Jan 21 00:00:00 EST 2015
· Journal of Applied Physics
·
OSTI ID:22261612
+4 more
Low-temperature study of array of dopant atoms on transport behaviors in silicon junctionless nanowire transistor
Journal Article
·
Sun Sep 28 00:00:00 EDT 2014
· Journal of Applied Physics
·
OSTI ID:22261612
+2 more
Back bias induced dynamic and steep subthreshold swing in junctionless transistors
Journal Article
·
Mon Jul 21 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22261612