Manipulation of electronic and magnetic properties of M{sub 2}C (M = Hf, Nb, Sc, Ta, Ti, V, Zr) monolayer by applying mechanical strains
- HEDPS, Center for Applied Physics and Technology, Peking University, Beijing 100871 (China)
Tuning the electronic and magnetic properties of a material through strain engineering is an effective strategy to enhance the performance of electronic and spintronic devices. In this paper, first-principles calculations based on density functional theory are carried out to investigate the electronic and magnetic properties of M{sub 2}C(M = Hf, Nb, Sc, Ta, Ti, V, Zr, known as MXenes) subjected to biaxial symmetric mechanical strains. At the strain-free state, all these MXenes exhibit no spontaneous magnetism except for Ti{sub 2}C and Zr{sub 2}C which show a magnetic moment of 1.92 and 1.25 μ{sub B}/unit, respectively. As the tensile strain increases, the magnetic moments of MXenes are greatly enhanced and a transition from nonmagnetism to ferromagnetism is observed for those nonmagnetic MXenes at zero strains. The most distinct transition is found in Hf{sub 2}C, in which the magnetic moment is elevated to 1.5 μ{sub B}/unit at a strain of 1.80%. We further show that the magnetic properties of Hf{sub 2}C are attributed to the band shift mainly composed of Hf(5d) states.
- OSTI ID:
- 22261609
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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