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Title: Anomalous large electrical capacitance of planar microstructures with vanadium dioxide films near the insulator-metal phase transition

The temperature dependence of electrical capacitance of planar microstructures with vanadium dioxide (VO{sub 2}) film near the insulator-metal phase transition has been investigated at the frequency of 1 MHz. Electrical capacitance measurements of the microstructures were performed by the technique based on the using of a two-terminal resistor-capacitor module simulating the VO{sub 2} layer behavior at the insulator-metal phase transition. At temperatures 325–342 K, the anomalous increase in microstructures capacitance was observed. Calculation of electric field in the microstructure showed that VO{sub 2} relative permittivity (ε) reaches ∼10{sup 8} at the percolation threshold. The high value of ε can be explained by the fractal nature of the interface between metal and insulator clusters formed near the insulator-metal phase transition.
Authors:
; ;  [1]
  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, 13 Lavrentyev Ave., 630090 Novosibirsk (Russian Federation)
Publication Date:
OSTI Identifier:
22261607
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CAPACITANCE; CAPACITORS; ELECTRIC FIELDS; METALS; MICROSTRUCTURE; PERMITTIVITY; PHASE TRANSFORMATIONS; RESISTORS; TEMPERATURE DEPENDENCE; THIN FILMS; VANADIUM OXIDES