skip to main content

SciTech ConnectSciTech Connect

Title: Investigation of charge compensation in indium-doped tin dioxide by hydrogen insertion via annealing under humid conditions

The behavior of hydrogen (H) as an impurity in indium (In)-doped tin dioxide (SnO{sub 2}) was investigated by mass spectrometry analyses, with the aim of understanding the charge compensation mechanism in SnO{sub 2}. The H-concentration of the In-doped SnO{sub 2} films increased to (1–2) × 10{sup 19} cm{sup −3} by annealing in a humid atmosphere (WET annealing). The electron concentration in the films also increased after WET annealing but was two orders of magnitude less than their H-concentrations. A self-compensation mechanism, based on the assumption that H sits at substitutional sites, is proposed to explain the mismatch between the electron- and H-concentrations.
Authors:
 [1] ;  [2] ; ; ; ;  [1] ; ;  [1] ;  [3] ;  [4] ;  [5] ; ; ;  [6] ;  [1] ;  [3] ;  [7]
  1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  2. (ICYS-MANA), NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)
  3. (Japan)
  4. Paul-Drude-Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)
  5. (United States)
  6. Materials Department, University of California, Santa Barbara, California 93106 (United States)
  7. (MCES), Mailbox S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-0026 (Japan)
Publication Date:
OSTI Identifier:
22261606
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABUNDANCE; ANNEALING; CONCENTRATION RATIO; DOPED MATERIALS; HYDROGEN; INDIUM; MASS SPECTROSCOPY; TIN OXIDES