Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Journal Article · Mon Mar 31 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4870257· OSTI ID:22261604

Chidambaram, Thenappan; Madisetti, Shailesh; Greene, Andrew; Yakimov, Michael; Tokranov, Vadim; Oktyabrsky, Serge ^[1]; Veksler, Dmitry; Hill, Richard ^[2]

---

1. SUNY College of Nanoscale Science and Engineering, Albany, New York 12203 (United States)
2. SEMATECH, Albany, New York 12203 (United States)

In this work, we are using a gated Hall method for measurement of free carrier density and electron mobility in buried InGaAs quantum well metal-oxide-semiconductor field-effect-transistor channels. At room temperature, mobility over 8000 cm{sup 2}/Vs is observed at ∼1.4 × 10{sup 12} cm{sup −2}. Temperature dependence of the electron mobility gives the evidence that remote Coulomb scattering dominates at electron density <2 × 10{sup 11} cm{sup −2}. Spectrum of the interface/border traps is quantified from comparison of Hall data with capacitance-voltage measurements or electrostatic modeling. Above the threshold voltage, gate control is strongly limited by fast traps that cannot be distinguished from free channel carriers just by capacitance-based methods and can be the reason for significant overestimation of channel density and underestimation of carrier mobility from transistor measurements.

• OSTI ID: 22261604
• Journal Information: Applied Physics Letters, Vol. 104, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CARRIER MOBILITY
COULOMB SCATTERING
ELECTRON MOBILITY
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
INDIUM ARSENIDES
OXIDES
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K