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Title: Formation of p-n-p junction with ionic liquid gate in graphene

Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.
Authors:
; ; ; ; ; ;  [1] ;  [2] ; ;  [1] ;  [3] ;  [4]
  1. State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China)
  2. Institute of Life Sciences, Jiangsu University, Zhenjiang 212013, Jiangsu Province (China)
  3. (China)
  4. Department of Physics, Tsinghua University, Beijing 100084 (China)
Publication Date:
OSTI Identifier:
22261595
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARRIER DENSITY; DOPED MATERIALS; GRAPHENE; MOLTEN SALTS; SEMICONDUCTOR JUNCTIONS