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Title: Trapping in GaN-based metal-insulator-semiconductor transistors: Role of high drain bias and hot electrons

This paper describes an extensive analysis of the role of off-state and semi-on state bias in inducing the trapping in GaN-based power High Electron Mobility Transistors. The study is based on combined pulsed characterization and on-resistance transient measurements. We demonstrate that—by changing the quiescent bias point from the off-state to the semi-on state—it is possible to separately analyze two relevant trapping mechanisms: (i) the trapping of electrons in the gate-drain access region, activated by the exposure to high drain bias in the off-state; (ii) the trapping of hot-electrons within the AlGaN barrier or the gate insulator, which occurs when the devices are operated in the semi-on state. The dependence of these two mechanisms on the bias conditions and on temperature, and the properties (activation energy and cross section) of the related traps are described in the text.
Authors:
; ; ;  [1] ; ; ; ; ;  [2]
  1. Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)
  2. IMEC, Kapeldreef 75, 3001 Heverlee (Belgium)
Publication Date:
OSTI Identifier:
22261586
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ACTIVATION ENERGY; CROSS SECTIONS; ELECTRON MOBILITY; ELECTRONS; GALLIUM NITRIDES; SEMICONDUCTOR MATERIALS; TRANSISTORS