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Title: Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C{sub 3v} symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks.
Authors:
;  [1] ;  [2] ; ; ; ; ; ;  [1] ;  [1] ;  [3] ;  [4]
  1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)
  2. (Japan)
  3. (Italy)
  4. Dip. di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I-20125 Milano (Italy)
Publication Date:
OSTI Identifier:
22261581
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; EPITAXY; INDIUM ARSENIDES; INDIUM PHOSPHIDES; PHOTOLUMINESCENCE; QUANTUM DOTS; TEMPERATURE RANGE 0273-0400 K