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Title: Ferroelectric modulation on resonant tunneling through perovskite double-barriers

The negative differential resistance (NDR) due to resonance tunneling is achieved at room temperature in perovskite double-barrier heterostructures composed of a 10 unit-cell-thick SrTiO{sub 3} quantum well sandwiched in two 10 unit-cell-thick LaAlO{sub 3} barriers. The NDR occurs at 1.2 V and does not change with voltage cycling. When the paraelectric SrTiO{sub 3} quantum well is replaced by a ferroelectric BaTiO{sub 3}, the onset of the NDR can be modulated by polarization switching in the ultrathin BaTiO{sub 3}. A polarization pointing to the collector lowers the NDR voltage but a polarization pointing to the emitter increases it. The shift of the NDR voltage is ascribed to reversal of the extra electric field in the quantum well due to the polarization switching.
Authors:
; ; ;  [1]
  1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22261569
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; PEROVSKITE; QUANTUM WELLS; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K; TUNNEL EFFECT