Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871471· OSTI ID:22261562

Wongsaeng, Chalao ^[1]; Singjai, Pisith ^[2]

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1. Department of Science, Faculty of Sciences and Agricultural Technology, Rajamangala University of Technology Lanna Tak, Tak 63000 (Thailand)
2. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current–gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs.

• OSTI ID: 22261562
• Journal Information: Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARBON NANOTUBES
CHEMICAL VAPOR DEPOSITION
FIELD EFFECT TRANSISTORS
GOLD
PVA
SEMICONDUCTOR MATERIALS