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Title: Mobilities in ambipolar field effect transistors based on single-walled carbon nanotube network and formed on a gold nanoparticle template

Ambipolar field effect transistors based on a single-walled carbon nanotube (SWNT) network formed on a gold nanoparticle (AuNP) template with polyvinyl alcohol as a gate insulator were studied by measuring the current–gate voltage characteristics. It was found that the mobilities of holes and electrons increased with increasing AuNP number density. The disturbances in the flow pattern of the carbon feedstock in the chemical vapor deposition growth that were produced by the AuNP geometry, resulted in the differences in the crystallinity and the diameter, as well as the changes in the degree of the semiconductor behavior of the SWNTs.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Science, Faculty of Sciences and Agricultural Technology, Rajamangala University of Technology Lanna Tak, Tak 63000 (Thailand)
  2. (Thailand)
  3. Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)
Publication Date:
OSTI Identifier:
22261562
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CARBON NANOTUBES; CHEMICAL VAPOR DEPOSITION; FIELD EFFECT TRANSISTORS; GOLD; PVA; SEMICONDUCTOR MATERIALS