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Title: Nanowire-based ternary transistor by threshold-voltage manipulation

We report on a ternary device consisting of two nanowire channels that have different threshold voltage (V{sub th}) values and show that three current stages can be produced. A microscale laser-beam shot was utilized to selectively anneal the nanowire channel area to be processed, and the amount of V{sub th} shift could be controlled by adjusting the laser wavelength. Microscale laser annealing process could control V{sub th} of the individual nanowire transistors while maintaining the other parameters the constant, such as the subthreshold slope, on–off current ratio, and mobility. This result could provide a potential for highly integrated and high-speed ternary circuits.
Authors:
; ; ; ;  [1] ;  [2]
  1. Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)
  2. Department of Electronics and Radio Engineering, Kyung Hee University, Yongin, Gyeonggi-Do 446-701 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22261554
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; ELECTRIC POTENTIAL; QUANTUM WIRES; TRANSISTORS