Unusual nanostructures of “lattice matched” InP on AlInAs

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4871086· OSTI ID:22261552

Manganaro, M.; Juska, G.; Dimastrodonato, V.; Thomas, K.; Pelucchi, E. ^[1]; Joyce, B. A.; Zhang, J.; Vvedensky, D. D. ^[2]

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1. Tyndall National Institute, University College Cork, “Lee Maltings,” Dyke Parade, Cork (Ireland)
2. The Blackett Laboratory, Imperial College London, London SW7 2AZ (United Kingdom)

We show that the morphology of the initial monolayers of InP on Al{sub 0.48}In{sub 0.52}As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional structures, e.g., quantum dots and wires. We discuss how the macroscopically strain-free heteroepitaxy might be strongly affected by local phase separation/alloying-induced strain and that the preferred aggregation of adatom species on the substrate surface and reduced wettability of InP on AlInAs surfaces might be the cause of the unusual (step) organization and morphology.

• OSTI ID: 22261552
• Journal Information: Applied Physics Letters, Vol. 104, Issue 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AGGLOMERATION
INDIUM PHOSPHIDES
LAYERS
MORPHOLOGY
QUANTUM DOTS
STRAINS
VAPOR PHASE EPITAXY