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Title: Self-annihilation of inversion domains by high energy defects in III-Nitrides

Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ∼1 μm thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001{sup ¯}) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN.
Authors:
; ; ;  [1] ; ;  [2]
  1. Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece)
  2. Microelectronics Research Group, IESL, FORTH, P.O. Box 1385, GR-71110 Heraklion, Crete, Greece and Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)
Publication Date:
OSTI Identifier:
22261547
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM NITRIDES; ANNIHILATION; ELECTRON MICROSCOPY; GALLIUM NITRIDES; INDIUM NITRIDES; MOLECULAR BEAM EPITAXY