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Title: Barrier height enhancement of Ni/GaN Schottky diode using Ru based passivation scheme

Wet chemical passivation of n-GaN surface using Ru based solution has been reported. X-ray photoelectron spectroscopy characterization of the GaN surface revealed removal of surface oxides by the introduction of Ru complex species. Ni/n-GaN Schottky barrier diodes were fabricated on passivated GaN and a remarkable improvement in Schottky barrier height from 0.76‚ÄČeV to 0.92‚ÄČeV was observed.
Authors:
; ;  [1] ;  [2] ;  [3] ;  [4]
  1. Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)
  2. Department of Physics, National Institute of Technology, Kurukshetra 136119 (India)
  3. CSIR - National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi - 110 012 (India)
  4. Solid State Physical Laboratory, Timarpur, Delhi 110054 (India)
Publication Date:
OSTI Identifier:
22261545
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; PASSIVATION; RUTHENIUM COMPLEXES; SCHOTTKY BARRIER DIODES; X-RAY PHOTOELECTRON SPECTROSCOPY