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Title: Vacancy-type defects in In{sub x}Ga{sub 1−x}N grown on GaN templates probed using monoenergetic positron beams

Native defects in In{sub x}Ga{sub 1−x}N layers grown by metalorganic chemical vapor deposition were studied using monoenergetic positron beams. Measurements of Doppler broadening spectra of the annihilation radiation and lifetime spectra of positrons for a 200-nm-thick In{sub 0.13}Ga{sub 0.87}N layer showed that vacancy-type defects were introduced by InN alloying, and the major species of such defects was identified as complexes between a cation vacancy and nitrogen vacancies. The presence of the defects correlated with lattice relaxation of the In{sub 0.13}Ga{sub 0.87}N layer and the increase in photon emissions from donor-acceptor-pair recombination. The species of native defects in In{sub 0.06}Ga{sub 0.94}N layers was the same but its concentration was decreased by decreasing the InN composition. With the layer thickness increased from 120 nm to 360 nm, a defect-rich region was introduced in the subsurface region (<160 nm), which can be associated with layer growth with the relaxation of compressive stress.
Authors:
 [1] ; ; ; ;  [2] ; ;  [3] ;  [4] ; ;  [5]
  1. Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
  2. Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)
  3. Wide Bandgap Material Group, National Institute for Materials Science, Tsukuba 305-0044 (Japan)
  4. Nanosystem Research Institute (NRI) “RICS,” National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
  5. Research Institute of Instrumentation Frontier, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)
Publication Date:
OSTI Identifier:
22259295
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ABUNDANCE; ANNIHILATION; ARSENIC COMPLEXES; CATIONS; CHEMICAL VAPOR DEPOSITION; DEFECTS; DOPPLER BROADENING; ECOLOGICAL CONCENTRATION; GALLIUM NITRIDES; HOTELS; INDIUM NITRIDES; LIFETIME; NITROGEN; PHOTON EMISSION; POSITRON BEAMS; POSITRONS; RECOMBINATION; RELAXATION; SPECTRA; VACANCIES