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Title: Electron scattering mechanisms in fluorine-doped SnO{sub 2} thin films

Polycrystalline fluorine-doped SnO{sub 2} (FTO) thin films have been grown by ultrasonic spray pyrolysis on glass substrate. By varying growth conditions, several FTO specimens have been deposited and the study of their structural, electrical, and optical properties has been carried out. By systematically investigating the mobility as a function of carrier density, grain size, and crystallite size, the contribution of each physical mechanism involved in the electron scattering has been derived. A thorough comparison of experimental data and calculations allows to disentangle these different mechanisms and to deduce their relative importance. In particular, the roles of extended structural defects such as grain or twin boundaries as revealed by electron microscopy or x-ray diffraction along with ionized impurities are discussed. As a consequence, based on the quantitative analysis presented here, an experimental methodology leading to the improvement of the electro-optical properties of FTO thin films is reported. FTO thin films assuming an electrical resistivity as low as 3.7 · 10{sup −4} Ω cm (square sheet resistance of 8 Ω/◻) while retaining good transmittance up to 86% (including substrate effect) in the visible range have been obtained.
Authors:
; ;  [1] ;  [1] ;  [2] ;  [3] ;  [4]
  1. Laboratoire des Matériaux et du Génie Physique, CNRS—Grenoble INP, 3 parvis Louis Néel, 38016 Grenoble (France)
  2. (France)
  3. Micro-Nanoelectronics Centre, Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland)
  4. Institut de Microélectronique Electromagnétisme et Photonique-Laboratoire d'Hyperfréquences et de Caractérisation, Grenoble INP, 3 Parvis Louis Néel, 38016 Grenoble (France)
Publication Date:
OSTI Identifier:
22259290
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 18; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; CARRIER DENSITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON MICROSCOPY; FLUORINE; GRAIN SIZE; IMPURITIES; OPTICAL PROPERTIES; POLYCRYSTALS; PYROLYSIS; SUBSTRATES; THIN FILMS; TIN OXIDES; X-RAY DIFFRACTION