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Title: Kinetic study on hot-wire-assisted atomic layer deposition of nickel thin films

High-purity Ni films were deposited using hot-wire-assisted atomic layer deposition (HW-ALD) at deposition temperatures of 175, 250, and 350 °C. Negligible amount of nitrogen or carbon contamination was detected, even though the authors used NH{sub 2} radical as the reducing agent and nickelocene as the precursor. NH{sub 2} radicals were generated by the thermal decomposition of NH{sub 3} with the assist of HW and used to reduce the adsorbed metal growth precursors. To understand and improve the deposition process, the kinetics of HW-ALD were analyzed using a Langmuir-type model. Unlike remote-plasma-enhanced atomic layer deposition, HW-ALD does not lead to plasma-induced damage. This is a significant advantage, because the authors can supply sufficient NH{sub 2} radicals to deposit high-purity metallic films by adjusting the distance between the hot wire and the substrate. NH{sub 2} radicals have a short lifetime, and it was important to use a short distance between the radical generation site and substrate. Furthermore, the impurity content of the nickel films was independent of the deposition temperature, which is evidence of the temperature-independent nature of the NH{sub 2} radical flux and the reactivity of the NH{sub 2} radicals.
Authors:
; ; ;  [1]
  1. Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Publication Date:
OSTI Identifier:
22258785
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMMONIA; CARBON; DEPOSITION; DEPOSITS; IMPURITIES; LANGMUIR FREQUENCY; NICKEL; NITROGEN; PLASMA; PRECURSOR; PYROLYSIS; RADICALS; REACTIVITY; REDUCING AGENTS; SUBSTRATES; THIN FILMS; WIRES