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Title: Capacitance and conductance versus voltage characterization of Al{sub 2}O{sub 3} layers prepared by plasma enhanced atomic layer deposition at 25 °C≤ T ≤ 200 °C

In this work, plasma enhanced atomic layer deposited (PE-ALD) samples were prepared at substrate temperatures in the range between room temperature (RT) and 200 °C and investigated by capacitance–voltage and conductance–voltage recordings. The measurements are compared to standard thermal atomic layer deposition (T-ALD) at 200 °C. Very low interface state density (D{sub it}) ∼10{sup 11} eV{sup −1} cm{sup −2} could be achieved for the PE-ALD process at 200 °C substrate temperature after postdeposition anneal (PDA) in forming gas at 450 °C. The PDA works very effectively for both the PE-ALD and T-ALD at 200 °C substrate temperature delivering also similar values of negative fixed charge density (N{sub fix}) around −2.5 × 10{sup 12} cm{sup −2}. At the substrate temperature of 150 °C, highest N{sub fix} (−2.9 × 10{sup 12} cm{sup −2}) and moderate D{sub it} (2.7 × 10{sup 11} eV{sup −1} cm{sup −2}) values were observed. The as deposited PE-ALD layer at RT shows both low D{sub it} in the range of (1 to 3) × 10{sup 11} eV{sup −1} cm{sup −2} and low N{sub fix} (−4.4 × 10{sup 11} cm{sup −2}) at the same time. The dependencies of N{sub fix}, D{sub it}, and relative permittivity on the substrate temperatures and its adjustability are discussed.
Authors:
; ;  [1] ; ; ;  [2]
  1. Applied Physics and Sensors, Brandenburg University of Technology Cottbus-Senftenberg, K.-Wachsmann-Allee 17, D-03046 Cottbus (Germany)
  2. Sentech Instruments GmbH, Schwarzschildstraße 2, 12489 Berlin (Germany)
Publication Date:
OSTI Identifier:
22258774
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CAPACITANCE; CHARGE DENSITY; COMPARATIVE EVALUATIONS; DEPOSITION; DEPOSITS; ELECTRIC POTENTIAL; LAYERS; PERMITTIVITY; PLASMA; SUBSTRATES; TEMPERATURE RANGE 0273-0400 K