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Title: Luminescence based series resistance mapping of III-V multijunction solar cells

A method to measure the series resistance of Ga{sub 0.5}In{sub 0.5}P/Ga(In)As/Ge triple-junction solar cells spatially resolved is developed, based on luminescence imaging. With the help of network simulations, the dependence of the local series resistance on the external subcell illumination intensities and biasing voltage is predicted and the optimum measurement conditions are clarified. Experimentally, specially prepared test cells with partially irradiated areas are used to verify the capabilities of the method. It is shown that the method is not sensitive to variations of the dark I–V parameters of the subcells.
Authors:
;  [1] ;  [2] ;  [3] ;  [4] ;  [1]
  1. Solar Array Center, EADS Astrium, 81663 Munich (Germany)
  2. (Germany)
  3. Institute for Nanoelectronics, Technical University of Munich, Arcisstr. 21, 80333 Munich (Germany)
  4. Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110 Freiburg (Germany)
Publication Date:
OSTI Identifier:
22258753
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 19; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 14 SOLAR ENERGY; CONNECTORS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ILLUMINANCE; IRRADIATION; LUMINESCENCE; SOLAR CELLS