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Title: Low threshold for optical damage in AlGaN epilayers and heterostructures

Laser pulses with duration much shorter than the effective carrier lifetime cause permanent photoluminescence (PL) quenching and enhancement of PL decay rate in bare-faceted and capped AlGaN epilayers and multiple quantum wells at pulse energies about an order of magnitude lower than those causing the surface to melt and degrade. In contrast, GaN epilayers exhibit no photomodification in the same excitation intensity range. PL spectra and decay kinetics show that lattice heating is not responsible for the observed changes in AlGaN, which result from the formation of nonradiative recombination centers via recombination-enhanced defect reactions occurring at high nonequilibrium carrier densities.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [1] ;  [4]
  1. Department of ECSE, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  2. Institute of Applied Research and Semiconductor Physics Department, Vilnius University, Sauletekio al. 9-III, Vilnius, LT-10222 (Lithuania)
  3. Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209 (United States)
  4. (United States)
Publication Date:
OSTI Identifier:
22258726
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 20; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CARRIER DENSITY; CARRIER LIFETIME; DECAY; DEFECTS; EXCITATION; GALLIUM NITRIDES; HEATING; LASERS; PHOTOLUMINESCENCE; PULSES; QUANTUM WELLS; QUENCHING