Growth behavior and properties of atomic layer deposited tin oxide on silicon from novel tin(II)acetylacetonate precursor and ozone
- Department of Chemical Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)
- Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60607 (United States)
In this work, a novel liquid tin(II) precursor, tin(II)acetylacetonate [Sn(acac){sub 2}], was used to deposit tin oxide films on Si(100) substrate, using a custom-built hot wall atomic layer deposition (ALD) reactor. Three different oxidizers, water, oxygen, and ozone, were tried. Resulting growth rates were studied as a function of precursor dosage, oxidizer dosage, reactor temperature, and number of ALD cycles. The film growth rate was found to be 0.1 ± 0.01 nm/cycle within the wide ALD temperature window of 175–300 °C using ozone; no film growth was observed with water or oxygen. Characterization methods were used to study the composition, interface quality, crystallinity, microstructure, refractive index, surface morphology, and resistivity of the resulting films. X-ray photoelectron spectra showed the formation of a clean SnO{sub x}–Si interface. The resistivity of the SnO{sub x} films was calculated to be 0.3 Ω cm. Results of this work demonstrate the possibility of introducing Sn(acac){sub 2} as tin precursor to deposit conducting ALD SnO{sub x} thin films on a silicon surface, with clean interface and no formation of undesired SiO{sub 2} or other interfacial reaction products, for transparent conducting oxide applications.
- OSTI ID:
- 22258713
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Vol. 32, Issue 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA); ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPOSITION
DEPOSITS
INTERFACES
LAYERS
MICROSTRUCTURE
MORPHOLOGY
OXYGEN
OZONE
PRECURSOR
REFRACTIVE INDEX
SILICA
SILICON
SILICON OXIDES
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0400-1000 K
THIN FILMS
TIN OXIDES
WATER
X-RAY PHOTOELECTRON SPECTROSCOPY