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Title: Room-temperature observations of the weak localization in low-mobility graphene films

We report room-temperature observations of the quantum conductance corrections caused by the weak localization in graphene films synthesized using solid-state-source chemical vapor deposition. Both Raman spectroscopy and Hall measurements showed strong disorder in the samples with a low mobility of ∼430 cm{sup 2}/V s. The emergence of weak localization at room temperature arises from the competition between the valley-dependent scattering and the thermal dephasing in such low-quality samples, although quantum effects normally appear in the samples that have an ideal structure at cryogenic temperatures. The large disorder in our low-mobility samples unexpectedly preserved the quantum mechanical weak localization.
Authors:
; ; ; ; ; ;  [1] ; ;  [2]
  1. National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)
  2. School of Electrical and Electronic Engineering, Nanjing University, Nanjing 210093 (China)
Publication Date:
OSTI Identifier:
22258712
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CHEMICAL VAPOR DEPOSITION; CORRECTIONS; FILMS; GRAPHENE; MOBILITY; QUANTUM MECHANICS; RAMAN SPECTROSCOPY; SCATTERING