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Title: Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer

Dynamic conductance dI/dV and inelastic electron tunneling spectroscopy (IETS) d{sup 2}I/dV{sup 2} have been measured at different temperatures for double barrier magnetic tunnel junctions with a thin top MgO layer. The resistance in the antiparallel state exhibits a normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of pinholes in the thin top MgO layer. Three IETS peaks are the zero-bias anomaly, interface magnons, and barrier phonons in both the parallel and antiparallel states. The zero-bias anomaly is the strongest peak in the parallel state and its intensity decreases with temperature. The magnon has the largest intensity in the antiparallel state and its intensity also decreases with temperature. The origins of the dips and peaks in the dI/dV-V curve are also discussed.
Authors:
;  [1] ;  [2] ; ; ; ;  [1] ; ;  [3]
  1. Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
  2. (Ireland)
  3. CRANN and School of Physics, Trinity College, Dublin 2 (Ireland)
Publication Date:
OSTI Identifier:
22258708
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMMETRY; DIFFUSION BARRIERS; ELECTRON SPECTROSCOPY; LAYERS; MAGNESIUM OXIDES; MAGNONS; PEAKS; PHONONS; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT; VENTILATION BARRIERS