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Title: Impact of the hydrogen content on the photoluminescence efficiency of amorphous silicon alloys

This paper analyzes the impact of hydrogen on the photoluminescence (PL) efficiency of the three wide gap silicon alloys: silicon carbide (a-SiC{sub x}), silicon nitride (a-SiN{sub x}): silicon oxide (a-SiO{sub x}). All three materials behave similarly. The progression of the PL efficiency over the Si content splits into two regions. With decreasing Si content, the PL efficiency increases until a maximum is reached. With a further decrease of the Si content, the PL efficiency declines again. A comprehensive analysis of the sample structure reveals that the PL efficiency depends on the degree of passivation of Si and Y atoms (Y = C, N, O) with hydrogen. For samples with a high Si content, an effective passivation of incorporated Y atoms gives rise to an increasing PL efficiency. The PL efficiency of samples with a low Si content is limited due to a rising amount of unpassivated Si defect states. We find that a minimum amount of 0.2 H atoms per Si atom is required to maintain effective luminescence.
Authors:
;  [1]
  1. Institute for Photovoltaics and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)
Publication Date:
OSTI Identifier:
22258687
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DEFECTS; EFFICIENCY; HYDROGEN; PASSIVATION; PHOTOLUMINESCENCE; SILICON ALLOYS; SILICON CARBIDES; SILICON NITRIDES; SILICON OXIDES