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Title: Tin induced a-Si crystallization in thin films of Si-Sn alloys

Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.
Authors:
; ;  [1] ; ;  [2] ; ; ;  [3]
  1. Institute of Physics, National Academy of Sciences of Ukraine, 46 Nauky Ave., 03028 Kyiv (Ukraine)
  2. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Ave., 03028 Kyiv (Ukraine)
  3. Faculty of Physics, Taras Shevchenko National University of Kyiv, 60 Volodymyrska St., 01601 Kyiv (Ukraine)
Publication Date:
OSTI Identifier:
22258686
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 114; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; CRYSTALLIZATION; CRYSTALS; DEPOSITS; FLUORESCENCE; LAYERS; NANOSTRUCTURES; PHYSICAL VAPOR DEPOSITION; RAMAN EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON; SPECTROSCOPY; THIN FILMS; TIN