Tin induced a-Si crystallization in thin films of Si-Sn alloys
Abstract
Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.
- Authors:
-
- Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky Ave., 03028 Kyiv (Ukraine)
- Faculty of Physics, Taras Shevchenko National University of Kyiv, 60 Volodymyrska St., 01601 Kyiv (Ukraine)
- Publication Date:
- OSTI Identifier:
- 22258686
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 114; Journal Issue: 21; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALLOYS; CRYSTALLIZATION; CRYSTALS; DEPOSITS; FLUORESCENCE; LAYERS; NANOSTRUCTURES; PHYSICAL VAPOR DEPOSITION; RAMAN EFFECT; SCANNING ELECTRON MICROSCOPY; SILICON; SPECTROSCOPY; THIN FILMS; TIN
Citation Formats
Neimash, V., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com, Poroshin, V., Goushcha, A. O., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com, Shepeliavyi, P., Yukhymchuk, V., Melnyk, V., Kuzmich, A., and Makara, V. Tin induced a-Si crystallization in thin films of Si-Sn alloys. United States: N. p., 2013.
Web. doi:10.1063/1.4837661.
Neimash, V., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com, Poroshin, V., Goushcha, A. O., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com, Shepeliavyi, P., Yukhymchuk, V., Melnyk, V., Kuzmich, A., & Makara, V. Tin induced a-Si crystallization in thin films of Si-Sn alloys. United States. https://doi.org/10.1063/1.4837661
Neimash, V., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com, Poroshin, V., Goushcha, A. O., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com, Shepeliavyi, P., Yukhymchuk, V., Melnyk, V., Kuzmich, A., and Makara, V. 2013.
"Tin induced a-Si crystallization in thin films of Si-Sn alloys". United States. https://doi.org/10.1063/1.4837661.
@article{osti_22258686,
title = {Tin induced a-Si crystallization in thin films of Si-Sn alloys},
author = {Neimash, V., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com and Poroshin, V. and Goushcha, A. O., E-mail: neimash@iop.kiev.ua, E-mail: oleks.goushcha@nuportsoft.com and Shepeliavyi, P. and Yukhymchuk, V. and Melnyk, V. and Kuzmich, A. and Makara, V.},
abstractNote = {Effects of tin doping on crystallization of amorphous silicon were studied using Raman scattering, Auger spectroscopy, scanning electron microscopy, and X-ray fluorescence techniques. Formation of silicon nanocrystals (2–4 nm in size) in the amorphous matrix of Si{sub 1−x}Sn{sub x}, obtained by physical vapor deposition of the components in vacuum, was observed at temperatures around 300 °C. The aggregate volume of nanocrystals in the deposited film of Si{sub 1−x}Sn{sub x} exceeded 60% of the total film volume and correlated well with the tin content. Formation of structures with ∼80% partial volume of the nanocrystalline phase was also demonstrated. Tin-induced crystallization of amorphous silicon occurred only around the clusters of metallic tin, which suggested the crystallization mechanism involving an interfacial molten Si:Sn layer.},
doi = {10.1063/1.4837661},
url = {https://www.osti.gov/biblio/22258686},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 21,
volume = 114,
place = {United States},
year = {Sat Dec 07 00:00:00 EST 2013},
month = {Sat Dec 07 00:00:00 EST 2013}
}