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Title: Atomic layer deposition of bismuth oxide using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O

Bismuth oxide thin films were deposited by atomic layer deposition using Bi(OCMe{sub 2}{sup i}Pr){sub 3} and H{sub 2}O at deposition temperatures between 90 and 270 °C on Si{sub 3}N{sub 4}, TaN, and TiN substrates. Films were analyzed using spectroscopic ellipsometry, x-ray diffraction, x-ray reflectivity, high-resolution transmission electron microscopy, and Rutherford backscattering spectrometry. Bi{sub 2}O{sub 3} films deposited at 150 °C have a linear growth per cycle of 0.039 nm/cycle, density of 8.3 g/cm{sup 3}, band gap of approximately 2.9 eV, low carbon content, and show the β phase structure with a (201) preferred crystal orientation. Deposition temperatures above 210 °C and postdeposition anneals caused uneven volumetric expansion, resulting in a decrease in film density, increased interfacial roughness, and degraded optical properties.
Authors:
;  [1] ; ; ;  [2] ;  [3]
  1. Department of Electrical Engineering and Computer Science, Oregon State University, Corvallis, Oregon 97331 (United States)
  2. ON Semiconductor, Technology Development, Gresham, Oregon 97030 (United States)
  3. SAFC Hitech, Haverhill, Massachusetts 01832 (United States)
Publication Date:
OSTI Identifier:
22258682
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BISMUTH OXIDES; CARBON; CRYSTALS; DENSITY; DEPOSITION; DEPOSITS; ELLIPSOMETRY; REFLECTIVITY; ROUGHNESS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDES; SUBSTRATES; TANTALUM NITRIDES; THIN FILMS; TITANIUM NITRIDES; TRANSMISSION ELECTRON MICROSCOPY; WATER; X RADIATION; X-RAY DIFFRACTION