skip to main content

Title: Atomic layer deposition of molybdenum oxide using bis(tert-butylimido)bis(dimethylamido) molybdenum

Molybdenum trioxide films have been deposited using thermal atomic layer deposition techniques with bis(tert-butylimido)bis(dimethylamido)molybdenum. Films were deposited at temperatures from 100 to 300 °C using ozone as the oxidant for the process. The Mo precursor was evaluated for thermal stability and volatility using thermogravimetric analysis and static vapor pressure measurements. Film properties were evaluated with ellipsometry, x-ray photoelectron spectroscopy, secondary ion mass spectroscopy, and secondary electron microscopy. The growth rate per cycle was determined to extend from 0.3 to 2.4 Å/cycle with <4% nonuniformity (1-sigma) with-in-wafer across a 150 mm wafer for the investigated temperature range.
Authors:
;  [1] ; ; ;  [2]
  1. Ultratech/Cambridge NanoTech, 130 Turner Street, Waltham, Massachusetts 02453 (United States)
  2. SAFC Hitech, 1429 Hilldale Avenue, Haverhill, Massachusetts 01832 (United States)
Publication Date:
OSTI Identifier:
22258678
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; DEPOSITION; DEPOSITS; ELECTRON MICROSCOPY; ELLIPSOMETRY; FILMS; ION MICROPROBE ANALYSIS; MASS SPECTROSCOPY; MOLYBDENUM; MOLYBDENUM OXIDES; OXIDIZERS; OZONE; PRECURSOR; TEMPERATURE RANGE 0273-0400 K; THERMAL GRAVIMETRIC ANALYSIS; VAPOR PRESSURE; X-RAY PHOTOELECTRON SPECTROSCOPY