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Title: Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ∼4.6 eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.
Authors:
; ; ; ; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Intermolecular, 3011 North First Street, San Jose, California 95134 (United States)
  2. GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States)
  3. GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)
Publication Date:
OSTI Identifier:
22258677
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CAPACITORS; DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FILMS; HAFNIUM CHLORIDES; HAFNIUM OXIDES; HYDROFLUORIC ACID; INTEGRATED CIRCUITS; LAYERS; PRECURSOR; SEMICONDUCTOR DEVICES; SILICON; SILICON OXIDES; WORK FUNCTIONS