skip to main content

Title: Film properties of low temperature HfO{sub 2} grown with H{sub 2}O, O{sub 3}, or remote O{sub 2}-plasma

A reduction of the deposition temperature is necessary for atomic layer deposition (ALD) on organic devices. HfO{sub 2} films were deposited by ALD on silicon substrates in a wide temperature range from 80 to 300 °C with tetrakis[ethylmethylamino]hafnium as metal precursor and H{sub 2}O, O{sub 3}, or an remote O{sub 2}-plasma as oxygen source. Growth rate and density were correlated to electrical properties like dielectric constant and leakage current of simple capacitor structures to evaluate the impact of different process conditions. Process optimizations were performed to reduce film imperfections visible at lower deposition temperatures. Additionally, the influence of postdeposition annealing on the structural and electrical properties was studied.
Authors:
; ;  [1] ;  [2]
  1. NaMLab gGmbH, Noethnitzerstr. 64, 01187 Dresden (Germany)
  2. NaMLab gGmbH, Noethnitzerstr. 64, 01187 Dresden, Germany and Institut für Halbleiter und Mikrosystemtechnik, TU Dresden, Noethnitzerstr. 64, 01187 Dresden (Germany)
Publication Date:
OSTI Identifier:
22258676
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 1; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; CAPACITORS; DEPOSITION; FILMS; HAFNIUM; HAFNIUM OXIDES; LEAKAGE CURRENT; OPTIMIZATION; OXYGEN; OZONE; PERMITTIVITY; PLASMA; SILICON; SUBSTRATES; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; WATER