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Title: Performance improvement of gadolinium oxide resistive random access memory treated by hydrogen plasma immersion ion implantation

Characteristics improvement of gadolinium oxide (Gd{sub x}O{sub y}) resistive random access memories (RRAMs) treated by hydrogen plasma immersion ion implantation (PIII) was investigated. With the hydrogen PIII treatment, the Gd{sub x}O{sub y} RRAMs exhibited low set/reset voltages and a high resistance ratio, which were attributed to the enhanced movement of oxygen ions within the Gd{sub x}O{sub y} films and the increased Schottky barrier height at Pt/Gd{sub x}O{sub y} interface, respectively. The resistive switching mechanism of Gd{sub x}O{sub y} RRAMs was dominated by Schottky emission, as proved by the area dependence of the resistance in the low resistance state. After the hydrogen PIII treatment, a retention time of more than 10{sup 4} s was achieved at an elevated measurement temperature. In addition, a stable cycling endurance with the resistance ratio of more than three orders of magnitude of the Gd{sub x}O{sub y} RRAMs can be obtained.
Authors:
; ;  [1] ; ;  [2]
  1. Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan (China)
  2. Institute of Nuclear Energy Research, Atomic Energy Council, Longtan 325, Taoyuan, Taiwan (China)
Publication Date:
OSTI Identifier:
22258673
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films; Journal Volume: 32; Journal Issue: 2; Other Information: (c) 2014 American Vacuum Society; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC POTENTIAL; FILMS; GADOLINIUM OXIDES; HYDROGEN; ION IMPLANTATION; OXYGEN IONS; PERFORMANCE; PLASMA; RANDOMNESS; SCHOTTKY BARRIER DIODES